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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/8192

Title: A Novel Approach to Link Process Parameters to BSIM Model Parameters
Authors: MANDE, S
CHANDORKAR, AN
HSAIO, C
HUANG, K
SHEU, YM
LIU, S
Keywords: analog integrated-circuits
device simulation
optimization
design
technologies
sensitivity
methodology
Issue Date: 2009
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 22(4), 544-551
Abstract: In this paper, we demonstrate a methodology to link process parameters to BSIM model parameters. Here, we have combined well-known statistical methods like principal component analysis (PCA), design of experiments (DOE), and response surface methodology (RSM) to bridge the missing link between process parameters and model parameters. The proposed methodology uses the concept of a correlation matrix, which transforms the process level information to the device and circuit level information through the BSIM model parameters. The proposed methodology has been successfully implemented on an advanced CMOS process. Our results show a strong linear correlation for the data obtained from two techniques namely TCAD technique and the standard HSPICE simulation technique. In both cases the process conditions were kept identical for comparison.
URI: http://dx.doi.org/10.1109/TSM.2009.2031782
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8192
http://hdl.handle.net/10054/8192
ISSN: 0894-6507
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