DSpace
 

DSpace at IIT Bombay >
IITB Publications >
Article >

Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/8162

Title: A Comparative NBTI Study of HfO(2), HfSiO(x), and SiON p-MOSFETs Using UF-OTF I(DLIN) Technique
Authors: DEORA, S
MAHETA, VD
BERSUKER, G
OLSEN, C
AHMED, KZ
JAMMY, R
MAHAPATRA, S
Keywords: bias temperature instability
gate stacks
Issue Date: 2009
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: IEEE ELECTRON DEVICE LETTERS, 30(2), 152-154
Abstract: The time, temperature, and oxide-field dependence of negative-bias temperature instability is studied in HfO(2)/TiN, HfSiO(x)/TiN, and SiON/poly-Si p-MOSFETs using ultrafast on-the-fly I(DLIN) technique capable of providing measured degradation from very short (approximately microseconds) to long stress time. Similar to rapid thermal nitrided oxide (RTNO) SiON, HfO(2) devices show very high temperature-independent degradation at short (submilliseconds) stress time, not observed for plasma nitrided oxide (PNO) SiON and HfSiO(x) devices. HfSiO(x) shows lower overall degradation, higher long-time power-law exponent, field acceleration, and temperature activation as compared to HfO(2), which are similar to the differences between PNO and RTNO SiON devices, respectively. The difference between HfsiO(x) and HfO(2) can be attributed to differences in N density in the SiO(2) IL of these devices.
URI: http://dx.doi.org/10.1109/LED.2008.2009235
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8162
http://hdl.handle.net/10054/8162
ISSN: 0741-3106
Appears in Collections:Article

Files in This Item:

File SizeFormat
A Comparative NBTI Study .pdf144.34 kBAdobe PDFView/Open
View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback