DSpace
 

DSpace at IIT Bombay >
IITB Publications >
Article >

Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/8158

Title: 1/f Noise in Drain and Gate Current of MOSFETs With High-k Gate Stacks
Authors: MAGNONE, P
CRUPI, F
GIUSI, G
PACE, C
SIMOEN, E
CLAEYS, C
PANTISANO, L
MAJI, D
RAO, VR
SRINIVASAN, P
Keywords: low-frequency noise
mos-transistors
flicker noise
dielectrics
impact
behavior
nmosfets
mobility
defects
performance
Issue Date: 2009
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 9(2), 180-189
Abstract: In this paper, we investigate the quality of MOSFET gate stacks where high-k materials are implemented as gate dielectrics. We evaluate both drain- and gate-current noises in order to obtain information about the defect content of the gate stack. We analyze how the overall quality of the gate stack depends on the kind of high-k material, on the interfacial layer thickness, on the kind of gate electrode material, on the strain engineering, and on the substrate type. This comprehensive study allows us to understand which issues need to be addressed in order to achieve improved quality of the gate stack from a 1/f noise point of view.
URI: http://dx.doi.org/10.1109/TDMR.2009.2020406
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8158
http://hdl.handle.net/10054/8158
ISSN: 1530-4388
Appears in Collections:Article

Files in This Item:

File SizeFormat
1f Noise in Drain and Gate Curren.pdf509.67 kBAdobe PDFView/Open
View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback