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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/81

Title: Silicon film thickness considerations in SOI-DTMOS
Authors: DESAI, MP
SIVARAM, P
ANAND, B
Keywords: mosfet
semiconductor device models
semiconductor thin films
silicon-on-insulator
Issue Date: 2002
Publisher: IEEE
Citation: IEEE Electron Device Letters 23 (5), 276-8
Abstract: We study the body effect in silicon-on-insulator (SDI) devices to determine if enhanced drive currents can be obtained with a body bias equal to the supply voltage. We find that significantly enhanced drive currents are observed only when the film thickness is sufficiently large. We explain this phenomenon using two-dimensional (2-D) device simulations and conclude that a film thickness greater than 100 nm is required. This sets a criterion for SOI devices to be used as dynamic threshold MOSFETs.
URI: http://dx.doi.org/10.1109/55.998875
http://hdl.handle.net/10054/81
http://dspace.library.iitb.ac.in/xmlui/handle/10054/81
ISSN: 0741-3106
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