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| Title: | Silicon film thickness considerations in SOI-DTMOS |
| Authors: | DESAI, MP
SIVARAM, P
ANAND, B |
| Keywords: | mosfet
semiconductor device models
semiconductor thin films
silicon-on-insulator |
| Issue Date: | 2002 |
| Publisher: | IEEE |
| Citation: | IEEE Electron Device Letters 23 (5), 276-8 |
| Abstract: | We study the body effect in silicon-on-insulator (SDI) devices to determine if enhanced drive currents can be obtained with a body bias equal to the supply voltage. We find that significantly enhanced drive currents are observed only when the film thickness is sufficiently large. We explain this phenomenon using two-dimensional (2-D) device simulations and conclude that a film thickness greater than 100 nm is required. This sets a criterion for SOI devices to be used as dynamic threshold MOSFETs. |
| URI: | http://dx.doi.org/10.1109/55.998875
http://hdl.handle.net/10054/81
http://dspace.library.iitb.ac.in/xmlui/handle/10054/81 |
| ISSN: | 0741-3106 |
| Appears in Collections: | Article
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