Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/xmlui/handle/10054/8026
Title: From 1 Sun to 10 Suns c-Si Cells by Optimizing Metal Grid, Metal Resistance, and Junction Depth
Authors: CHAUDHARI, VA
SOLANKI, CS
Keywords: Solar-Cells
Crystalline Silicon
Series Resistance
Modules
Technology
Point
Issue Date: 2009
Publisher: HINDAWI PUBLISHING CORPORATION
Citation: INTERNATIONAL JOURNAL OF PHOTOENERGY, (), -
Abstract: Use of a solar cell in concentrator PV technology requires reduction in its series resistance in order to minimize the resistive power losses. The present paper discusses a methodology of reducing the series resistance of a commercial c-Si solar cell for concentrator applications, in the range of 2 to 10 suns. Step by step optimization of commercial cell in terms of grid geometry, junction depth, and electroplating of the front metal contacts is proposed. A model of resistance network of solar cell is developed and used for the optimization. Efficiency of unoptimized commercial cell at 10 suns drops by 30% of its 1 sun value corresponding to resistive power loss of about 42%. The optimized cell with grid optimization, junction optimization, electroplating, and junction optimized with electroplated contacts cell gives resistive power loss of 20%, 16%, 11%, and 8%, respectively. An efficiency gain of 3% at 10 suns for fully optimized cell is estimated.
URI: http://dx.doi.org/10.1155/2009/827402
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8026
http://hdl.handle.net/10054/8026
ISSN: 1110-662X
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