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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/7655

Title: IONIC PENETRATION INTO REOXIDIZED NITRIDED OXIDES IN ELECTROLYTE-OXIDE-SEMICONDUCTOR STRUCTURES
Authors: TOPKAR, A
LAL, R
Keywords: field-effect transistors
silicon dioxide films
thin-films
generation
radiation
hydrogen
devices
isfets
Issue Date: 1995
Publisher: ELSEVIER SCIENCE SA LAUSANNE
Citation: THIN SOLID FILMS, 259(2), 259-263
Abstract: To identify mechanisms affecting the stability of ion-sensitive field effect transistors (ISFETs) we investigated the penetration of water and ions into reoxidized nitrided oxide (RNO) which is known to have a higher resistance than silicon dioxide to the diffusion of impurities such as H2O, H+ and OH-. Electrolyte-oxide-semiconductor (EOS) structures with reoxidized nitrided oxide as dielectric were biased with different voltages. Metal-oxide-semiconductor capacitors were then fabricated incorporating these oxides. The charge trapping and the interface state generation susceptibility of reoxidized nitrided oxide after avalanche electron injection were compared for different capacitors. The increase in electron trapping observed for capacitors having reoxidized nitrided oxide exposed to acidic solution and stressed with negative bias to silicon is attributed to penetration of protons. This indicates that proton penetration and drift of protons into the insulator of the ISFET could lead to instability problems.
URI: http://dx.doi.org/10.1016/0040-6090(94)06437-7
http://dspace.library.iitb.ac.in/xmlui/handle/10054/7655
http://hdl.handle.net/10054/7655
ISSN: 0040-6090
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