DSpace at IIT Bombay >
IITB Publications >
Please use this identifier to cite or link to this item:
|Title: ||ELECTRODEPOSITION OF ZINC SELENIDE|
|Authors: ||NATARAJAN, C|
|Issue Date: ||1994|
|Publisher: ||ELSEVIER SCIENCE SA LAUSANNE|
|Citation: ||THIN SOLID FILMS, 237(1-2), 118-123|
|Abstract: ||The synthesis of polycrystalline thin films of cubic ZnSe by electrochemical plating on conducting substrates is described. The influence of deposition parameters such as electrolyte composition, deposition potential and temperature on the crystallinity and on the chemical composition of the films is discussed. Of the various plating techniques (potentiostatic, potentiodynamic pulse and galvanostatic), potentiostatic plating offers the best control of film composition. An excess of Se with respect to perfect stoichiometry cannot be avoided by adjusting electrolyte composition and deposition potential, but can be decreased by vacuum annealing.|
|Appears in Collections:||Article|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.