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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/7601

Title: EFFECT OF ELECTROLYTE EXPOSURE ON SILICON DIOXIDE IN ELECTROLYTE OXIDE SEMICONDUCTOR STRUCTURES
Authors: TOPKAR, A
LAL, R
Keywords: gate
generation
sensors
isfets
films
Issue Date: 1993
Publisher: ELSEVIER SCIENCE SA LAUSANNE
Citation: THIN SOLID FILMS, 232(2), 265-270
Abstract: The effect of hydration and ion penetration in silicon dioxide has been studied by fabricating metal oxide semiconductor capacitors on oxide exposed to acidic solutions with and without bias. Changes in oxide properties due to exposure have been probed using avalanche injection. Oxide charge build-up and interface state generation in the capacitors have been monitored. The measurements show that before avalanche injection the capacitance voltage plots for the various electrolyte exposure conditions are similar. However, oxide integrity degradation is different for cathodic bias compared with anodic bias or no bias. This is due to penetration of protons or hydroxyl ions in the oxide, producing hydrogen-related defects that affect trapping and interface state generation.
URI: http://dx.doi.org/10.1016/0040-6090(93)90020-P
http://dspace.library.iitb.ac.in/xmlui/handle/10054/7601
http://hdl.handle.net/10054/7601
ISSN: 0040-6090
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