EFFECT OF ANNEALING ON THE SURFACE AND INTERFACE PROPERTIES OF INDIUM OXIDE SILICON STRUCTURES

Abstract

Indium-indium oxide films were formed by vacuum evaporation of elemental indium onto Si/SiO2 substrates. It is shown that the oxidation of indium takes place at the substrate. The surface and structure of the film were investigated using X-ray diffraction and scanning electron microscopy. X-ray photoelectron spectroscopy and electrical (capacitance-voltage) characterization were used to study the effect of annealing on the interface. Temperature studies of this system indicate the growth of an interfacial insulating layer. This layer was identified as an oxide of silicon. This study is significant for understanding the behavior of In2O3/Si structures used in a variety of applications such as silicon doping with indium and sensor fabrication using an evaporated indium film.