DSpace at IIT Bombay >
IITB Publications >
Please use this identifier to cite or link to this item:
|Title: ||EFFECT OF ANNEALING ON THE SURFACE AND INTERFACE PROPERTIES OF INDIUM OXIDE SILICON STRUCTURES|
|Authors: ||KOLLURI, SV|
|Issue Date: ||1993|
|Publisher: ||ELSEVIER SCIENCE SA LAUSANNE|
|Citation: ||THIN SOLID FILMS, 230(1), 39-44|
|Abstract: ||Indium-indium oxide films were formed by vacuum evaporation of elemental indium onto Si/SiO2 substrates. It is shown that the oxidation of indium takes place at the substrate. The surface and structure of the film were investigated using X-ray diffraction and scanning electron microscopy. X-ray photoelectron spectroscopy and electrical (capacitance-voltage) characterization were used to study the effect of annealing on the interface. Temperature studies of this system indicate the growth of an interfacial insulating layer. This layer was identified as an oxide of silicon. This study is significant for understanding the behavior of In2O3/Si structures used in a variety of applications such as silicon doping with indium and sensor fabrication using an evaporated indium film.|
|Appears in Collections:||Article|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.