Sputter deposition of gallium nitride films using a GaAs target

Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/7486

Title:	Sputter deposition of gallium nitride films using a GaAs target
Authors:	ELKASHEF, N SRINIVASA, RS MAJOR, S SABHARWAL, SC MUTHE, KP
Keywords:	iii-v nitride optical-properties beam epitaxy thin-films gan growth wurtzite phase blue
Issue Date:	1998
Publisher:	ELSEVIER SCIENCE SA
Citation:	THIN SOLID FILMS, 333(1-2), 9-12
Abstract:	GaAs was used as the target material for the deposition of GaN films by reactive sputtering. The films were grown at different compositions of the sputtering gas mixture (0-100% nitrogen in argon) at substrate temperatures of 450 and 550 degrees C. The films were studied using XRD and XPS techniques. Even a small quantity of nitrogen in the sputtering medium was found to prevent the formation of GaAs on the substrate. Films grown at 550 degrees C using 100% nitrogen as the sputtering-reactive gas were found to be single phase (0002) oriented hexagonal gallium nitride and revealed complete absence of arsenic. (C) 1998 Elsevier Science S.A. .
URI:	http://dx.doi.org/10.1016/S0040-6090(98)00550-1 http://dspace.library.iitb.ac.in/xmlui/handle/10054/7486 http://hdl.handle.net/10054/7486
ISSN:	0040-6090
Appears in Collections:	Article

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