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|Title: ||Sputter deposition of gallium nitride films using a GaAs target|
|Authors: ||ELKASHEF, N|
|Keywords: ||iii-v nitride|
|Issue Date: ||1998|
|Publisher: ||ELSEVIER SCIENCE SA|
|Citation: ||THIN SOLID FILMS, 333(1-2), 9-12|
|Abstract: ||GaAs was used as the target material for the deposition of GaN films by reactive sputtering. The films were grown at different compositions of the sputtering gas mixture (0-100% nitrogen in argon) at substrate temperatures of 450 and 550 degrees C. The films were studied using XRD and XPS techniques. Even a small quantity of nitrogen in the sputtering medium was found to prevent the formation of GaAs on the substrate. Films grown at 550 degrees C using 100% nitrogen as the sputtering-reactive gas were found to be single phase (0002) oriented hexagonal gallium nitride and revealed complete absence of arsenic. (C) 1998 Elsevier Science S.A. .|
|Appears in Collections:||Article|
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