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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/7424

Title: Non-catalytic displacement plating (NCDP) of photosensitive semiconducting thin films
Authors: KUMAR, M
SHARAN, MK
SHARON, M
Keywords: solar-cells
cdse
Issue Date: 1998
Publisher: ELSEVIER SCIENCE SA
Citation: THIN SOLID FILMS, 312(1-2), 139-146
Abstract: Photosensitive thin films of binary and ternary phase semiconductors have been deposited on metallic substrates by non-catalytic displacement plating (NCDP). Various preparative parameters are optimized for deposition of CdSe, CdTe and ZnCdSe on Zn and Ti substrates. Bandgap of Zn(1-x)CdxSe has been tailored from 1.68 to 2.53 eV for various Zn/Cd molar ratios: Photoelectrodes thus prepared are found to yield a short circuit current up to 2 mu A and an open circuit voltage up to 0.45 V in S2-/S-2(2-) electrolyte. (C) 1998 Elsevier Science S.A.
URI: http://dx.doi.org/10.1016/S0040-6090(97)00734-7
http://dspace.library.iitb.ac.in/xmlui/handle/10054/7424
http://hdl.handle.net/10054/7424
ISSN: 0040-6090
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