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|Title: ||Non-catalytic displacement plating (NCDP) of photosensitive semiconducting thin films|
|Authors: ||KUMAR, M|
|Issue Date: ||1998|
|Publisher: ||ELSEVIER SCIENCE SA|
|Citation: ||THIN SOLID FILMS, 312(1-2), 139-146|
|Abstract: ||Photosensitive thin films of binary and ternary phase semiconductors have been deposited on metallic substrates by non-catalytic displacement plating (NCDP). Various preparative parameters are optimized for deposition of CdSe, CdTe and ZnCdSe on Zn and Ti substrates. Bandgap of Zn(1-x)CdxSe has been tailored from 1.68 to 2.53 eV for various Zn/Cd molar ratios: Photoelectrodes thus prepared are found to yield a short circuit current up to 2 mu A and an open circuit voltage up to 0.45 V in S2-/S-2(2-) electrolyte. (C) 1998 Elsevier Science S.A.|
|Appears in Collections:||Article|
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