Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/xmlui/handle/10054/7379
Title: Ion irradiation-induced modifications in the surface morphology of Ge20Se74Bi6 thin films
Authors: SHARMA, P
VASHISTHA, A
GANESAN, V
JAIN, IP
Keywords: Atomic-Force Microscopy
Electrical-Conductivity
Silicon
Glasses
Issue Date: 2008
Publisher: ELSEVIER SCIENCE SA
Citation: JOURNAL OF ALLOYS AND COMPOUNDS, 462(1-2), 452-455
Abstract: The swift heavy ion-induced changes in the surface morphology of Ge20Se74Bi6 thin films are observed using atomic force microscopy. Ge20Si74Bi6 thin films were irradiated with Ni ion of 75 MeV energy and the beam current during irradiation was 5 pnA and fluence was varied for different samples from 5 x 10(12) to 10(14) ions/cm(2). The AFM micrographs indicate special features on the surface resulting from electronic energy loss. (c) 2007
URI: http://dx.doi.org/10.1016/j.jallcom.2007.09.058
http://dspace.library.iitb.ac.in/xmlui/handle/10054/7379
http://hdl.handle.net/10054/7379
ISSN: 0925-8388
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