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|Title: ||TRANSPORT-PROPERTIES OF SB2O3 DOPED LASER-ABLATED YBA2CU3O7-DELTA|
|Authors: ||MURUGESAN, M|
|Issue Date: ||1994|
|Publisher: ||ELSEVIER SCIENCE BV|
|Citation: ||PHYSICA C, 234(3-4), 339-342|
|Abstract: ||The effect of Sb2O3 addition on YBa2Cu3O7-alpha films grown on  LaAlO3 by pulsed laser ablation has been studied. Transport measurement showed that though the critical temperature T(c) is slightly suppressed upon Sb2O3 doping, the critical current density J(c) increases up to 2.5 x 10(6) A cm-2 at 77 K for the critical concentration of 0.5 wt.% Sb2O3 and then decreases monotonically for further increase in Sb2O3 content. The increase in J(c) with 0.5 wt.% Sb2O3 addition is presumed to be due to the surfactant effect of Sb2O3 and the decrease in J(c) with the further increase of Sb2O3 content has been attributed to the formation of secondary insulating phase YBa2SbO6 as found by X-ray diffraction.|
|Appears in Collections:||Article|
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