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|Title:||The analysis of structural and electronic environments of silicon network in HWCVD deposited a-SiC : H films|
|Publisher:||ELSEVIER SCIENCE BV|
|Citation:||APPLIED SURFACE SCIENCE, 253(21), 8695-8698|
|Abstract:||Hydrogenated amorphous silicon carbon alloys (a-SiC:H) films were deposited by hot wire chemical vapour deposition (HWCVD) using SiH4 and C2H2 as precursor gases. a-SiC:H films were characterized by Fourier Transform Infrared (FTIR) spectroscopy, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Solid-state plasmon of Si network shifts from 19.2 to 20.5 eV by varying C2H2 flow rate from 2 to 10 seem. Incorporation of carbon content changes the valence band structure and s orbital is more dominant than sp and p orbital with carbon incorporation. (c) 2007|
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