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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/7065

Title: The analysis of structural and electronic environments of silicon network in HWCVD deposited a-SiC : H films
Authors: SWAIN, BP
Keywords: alloys
temperature
Issue Date: 2007
Publisher: ELSEVIER SCIENCE BV
Citation: APPLIED SURFACE SCIENCE, 253(21), 8695-8698
Abstract: Hydrogenated amorphous silicon carbon alloys (a-SiC:H) films were deposited by hot wire chemical vapour deposition (HWCVD) using SiH4 and C2H2 as precursor gases. a-SiC:H films were characterized by Fourier Transform Infrared (FTIR) spectroscopy, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Solid-state plasmon of Si network shifts from 19.2 to 20.5 eV by varying C2H2 flow rate from 2 to 10 seem. Incorporation of carbon content changes the valence band structure and s orbital is more dominant than sp and p orbital with carbon incorporation. (c) 2007
URI: http://dx.doi.org/10.1016/j.apsusc.2007.04.065
http://dspace.library.iitb.ac.in/xmlui/handle/10054/7065
http://hdl.handle.net/10054/7065
ISSN: 0169-4332
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