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| Title: | The analysis of structural and electronic environments of silicon network in HWCVD deposited a-SiC : H films |
| Authors: | SWAIN, BP |
| Keywords: | alloys
temperature |
| Issue Date: | 2007 |
| Publisher: | ELSEVIER SCIENCE BV |
| Citation: | APPLIED SURFACE SCIENCE, 253(21), 8695-8698 |
| Abstract: | Hydrogenated amorphous silicon carbon alloys (a-SiC:H) films were deposited by hot wire chemical vapour deposition (HWCVD) using SiH4 and C2H2 as precursor gases. a-SiC:H films were characterized by Fourier Transform Infrared (FTIR) spectroscopy, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Solid-state plasmon of Si network shifts from 19.2 to 20.5 eV by varying C2H2 flow rate from 2 to 10 seem. Incorporation of carbon content changes the valence band structure and s orbital is more dominant than sp and p orbital with carbon incorporation. (c) 2007 |
| URI: | http://dx.doi.org/10.1016/j.apsusc.2007.04.065
http://dspace.library.iitb.ac.in/xmlui/handle/10054/7065
http://hdl.handle.net/10054/7065 |
| ISSN: | 0169-4332 |
| Appears in Collections: | Article
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