DSpace at IIT Bombay >
IITB Publications >
Please use this identifier to cite or link to this item:
|Title: ||Surface modification by the potential delay technique to obtain a photoactive PbO film|
|Authors: ||MUKHOPADHYAY, I|
|Issue Date: ||1997|
|Publisher: ||ELSEVIER SCIENCE BV|
|Citation: ||SURFACE SCIENCE, 384(1-3), 234-239|
|Abstract: ||Non-stoichiometric alpha-PbO has been found to be a photoactive semiconducting oxide, where its photoactivity depends on the composition. A new electrosynthetic procedure was applied to obtain a surface modified photoactive PbO film. Typical results show that the resulting oxide phase is n-type with oxide ion vacancies. The photoresponse of the oxide film was studied using photoelectrochemical measurements. (C) 1997|
|Appears in Collections:||Article|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.