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|Title:||Surface modification by the potential delay technique to obtain a photoactive PbO film|
|Publisher:||ELSEVIER SCIENCE BV|
|Citation:||SURFACE SCIENCE, 384(1-3), 234-239|
|Abstract:||Non-stoichiometric alpha-PbO has been found to be a photoactive semiconducting oxide, where its photoactivity depends on the composition. A new electrosynthetic procedure was applied to obtain a surface modified photoactive PbO film. Typical results show that the resulting oxide phase is n-type with oxide ion vacancies. The photoresponse of the oxide film was studied using photoelectrochemical measurements. (C) 1997|
|Appears in Collections:||Article|
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