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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/690

Title: Metal nanocrystal memory with pt single- and dual-layer NC With low-Leakage AI2O3 Blocking Dielectric
Authors: SINGH, PK
BISHT, G
HOFMANN, R
SINGH, K
KRISHNA, N
MAHAPATRA, S
Keywords: cmos integrated circuit
aluminium compound
flash memories
nanostructured materials
Issue Date: 2008
Publisher: IEEE
Citation: IEEE Electron Device Letters 29 (12), 1389-1391
Abstract: In this letter, we report metal nanocrystal (NC)-based flash memory devices with single-layer (SL) and dual-layer (DL) Pt NCs as the storage element. The devices are fabricated using CMOS compatible process flow with optimized low-leakage high-k Al2O3 as the control dielectric. Large memory window (10 V for SL and 15 V for DL devices) is observed due to overerase, which increases the overall window. Improvement in DL memory window is found to be due to 1.5 times improvement in total stored charge over SL. Excellent high-temperature precycling retention is observed both for SL and DL devices.
URI: http://dx.doi.org/10.1109/LED.2008.2007308
http://hdl.handle.net/10054/690
http://dspace.library.iitb.ac.in/xmlui/handle/10054/690
ISSN: 0741-3106
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