NCDP-plated CdSe film PEC cell studies

Abstract

Thin films of CdSe grown by non-catalytic displacement plating (NCDP) are characterised electrochemically and photoelectrochemically in polysulphide electrolyte; using Cyclic Voltammetry in dark and under intermittent illumination, band edges of NCDP-plated CdSe are located. A depletion width of 2 mu m is calculated across the CdSe/S2-/S-2(2-) interface. Charge-transfer mechanism across this junction is dicussed. Electrochemical and photoelectrochemical stabilities of NCDP-plated CdSe electrode are studied. Efficiency and fill facto; of as-fabricated photoelectrochemical (PEG) cell are found to be 1.02% and 0.34, respectively.