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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/68

Title: A new approach to model nonquasi-static (NQS) effects for MOSFETs. Part II: small-signal analysis
Authors: ROY, AS
VASI, J
PATIL, MB
Keywords: galerkin method
mosfet
inversion layers
semiconductor device models
variational techniques
Issue Date: 2003
Publisher: IEEE
Citation: IEEE Transactions on Electron Devices 50(12), 2401 - 07
Abstract: We present a new approach to model nonquasi-static (NQS) effects in a MOSFET in a small-signal situation. The model derived here is based on the large-signal NQS model previously proposed. The derivation of the small-signal model is presented. The small-signal parameters obtained with this model prove to be accurate up to very high frequencies. An excellent match between the new model and device simulation results has been observed even when the frequency is many times larger than the cutoff frequency.
URI: http://dx.doi.org/10.1109/TED.2003.819054
http://hdl.handle.net/10054/68
http://dspace.library.iitb.ac.in/xmlui/handle/10054/68
ISSN: 0018-9383
Appears in Collections:Article

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