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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/6666

Title: Implications of fin width scaling on variability and reliability of high-k metal gate FinFETs
Authors: CHABUKSWAR, S
MAJI, D
MANOJ, CR
ANIL, KG
RAO, VR
CRUPI, F
MAGNONE, P
GIUSI, G
PACE, C
COLLAERT, N
Keywords: performance
impact
resistance
devices
Issue Date: 2010
Publisher: ELSEVIER SCIENCE BV
Citation: MICROELECTRONIC ENGINEERING, 87(10), 1963-1967
Abstract: In this paper, we report a study to understand the fin width dependence on performance, variability and reliability of n-type and p-type triple-gate fin field effect transistors (FinFETs) with high-k dielectric and metal gate. Our results indicate that with decreasing fin width the well-known performance improvement in terms of sub-threshold swing and drain-induced barrier lowering are accompanied by a degradation of the variability and the reliability. As a matter of fact fin width scaling causes (i) higher hot-carrier degradation (HC) in nFinFETs owing to the higher charge carrier temperature for the same internal stress voltages: (ii) worse negative bias temperature instability (NBTI) in pFinFETs due to the increased contribution from the (1 1 0) surface: (iii) higher variability due to the non-uniform fin extension doping, as highlighted by applying a novel characterization technique. (C) 2009
URI: http://dx.doi.org/10.1016/j.mee.2009.12.013
http://dspace.library.iitb.ac.in/xmlui/handle/10054/6666
http://hdl.handle.net/10054/6666
ISSN: 0167-9317
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