DSpace at IIT Bombay >
IITB Publications >
Please use this identifier to cite or link to this item:
|Title: ||Effect of substrate temperature on HWCVD deposited a-SiC : H film|
|Authors: ||SWAIN, BP|
|Issue Date: ||2007|
|Publisher: ||ELSEVIER SCIENCE BV|
|Citation: ||MATERIALS LETTERS, 61(25), 4731-4734|
|Abstract: ||Hydrogenated amorphous silicon carbon (a-SiC:H) films were deposited using pure SiH4 and C2H2 without hydrogen dilution by hot wire chemical vapor deposition (HWCVD) technique. The photoluminescence, optical, and structural properties of these films were systematically studied as a function of substrate temperature (T-s). a-SiC:H films deposited at lower substrate temperature (T-s) show degradation in their structural, optical and network properties. The hydrogen content (C-H) in the films was found to be increased with decrease of T-s studied. Photoluminescence spectra shift to higher energy and less FWHM at high T-s. Raman spectroscopic analysis showed that structural disorder increases with decrease in the T-s. (c) 2007|
|Appears in Collections:||Article|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.