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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/6542

Title: Effect of substrate temperature on HWCVD deposited a-SiC : H film
Authors: SWAIN, BP
DUSANE, RO
Keywords: chemical-vapor-deposition
hot-wire cvd
amorphous-silicon
dilution
Issue Date: 2007
Publisher: ELSEVIER SCIENCE BV
Citation: MATERIALS LETTERS, 61(25), 4731-4734
Abstract: Hydrogenated amorphous silicon carbon (a-SiC:H) films were deposited using pure SiH4 and C2H2 without hydrogen dilution by hot wire chemical vapor deposition (HWCVD) technique. The photoluminescence, optical, and structural properties of these films were systematically studied as a function of substrate temperature (T-s). a-SiC:H films deposited at lower substrate temperature (T-s) show degradation in their structural, optical and network properties. The hydrogen content (C-H) in the films was found to be increased with decrease of T-s studied. Photoluminescence spectra shift to higher energy and less FWHM at high T-s. Raman spectroscopic analysis showed that structural disorder increases with decrease in the T-s. (c) 2007
URI: http://dx.doi.org/10.1016/j.matlet.2007.03.029
http://dspace.library.iitb.ac.in/xmlui/handle/10054/6542
http://hdl.handle.net/10054/6542
ISSN: 0167-577X
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