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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/6529

Title: Effect of filament temperature on HWCVD deposited a-SiC : H
Authors: SWAIN, BP
DUSANE, RO
Keywords: silicon carbon alloys
thin-film
infrared-absorption
solar-cells
spectroscopy
cvd
Issue Date: 2006
Publisher: ELSEVIER SCIENCE BV
Citation: MATERIALS LETTERS, 60(24), 2915-2919
Abstract: The filament temperature (T-F) is determined to be a critical parameter for the deposition of HWCVD deposited a-SiC:H films. More carbon atoms are incorporated into the films in the favorable configurations and enhance the optical gap of the films. The changes in deposition rate, carbon content, optical gap and IR absorption of Si-C and C-H-n are demonstrated for a-SiC: H alloy films deposited with filament temperature ranging from 1650 to 2100 degrees C. The films were evaluated by absorption measurements in the visible region, Fourier-transform infrared spectroscopic measurements (FTIR), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy (RS) measurements. (c) 2005
URI: http://dx.doi.org/10.1016/j.matlet.2005.10.050
http://dspace.library.iitb.ac.in/xmlui/handle/10054/6529
http://hdl.handle.net/10054/6529
ISSN: 0167-577X
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