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|Title: ||Effect of filament temperature on HWCVD deposited a-SiC : H|
|Authors: ||SWAIN, BP|
|Keywords: ||silicon carbon alloys|
|Issue Date: ||2006|
|Publisher: ||ELSEVIER SCIENCE BV|
|Citation: ||MATERIALS LETTERS, 60(24), 2915-2919|
|Abstract: ||The filament temperature (T-F) is determined to be a critical parameter for the deposition of HWCVD deposited a-SiC:H films. More carbon atoms are incorporated into the films in the favorable configurations and enhance the optical gap of the films. The changes in deposition rate, carbon content, optical gap and IR absorption of Si-C and C-H-n are demonstrated for a-SiC: H alloy films deposited with filament temperature ranging from 1650 to 2100 degrees C. The films were evaluated by absorption measurements in the visible region, Fourier-transform infrared spectroscopic measurements (FTIR), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy (RS) measurements. (c) 2005|
|Appears in Collections:||Article|
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