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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/611

Title: Electrostatics and its effect on spatial distribution of tunnel current in metal Nanocrystal flash memories
Authors: NAINANI, ANEESH
ROY, ARUNASHU
SINGH, PK
MUKHOPADHYAY, GAUTAM
VASI, J
Keywords: flash memories
tunnelling
electrostatic
probability
Issue Date: 2007
Publisher: ICMTD
Citation: Proceedings of the 2nd International Conference on Memory Technology and Design, Giens, France, 7-10 May 2007, 251-254
Abstract: In this paper we present an analytic formulation of the electrostatics of metal based Nanocrystal (NC) flash memory, and study its effect on tunnelling probabilities. We establish that asymmetry in field distribution resulting from the electrostatics enhances the field near the NC. A spatial distributiion of tunnelling probabilities is presented for the first time. This analytical formulation can be easily coupled with the Schrodinger's equation to describe the Program/Erase dynamics of the NC,greatly reducing the computational time.
URI: http://hdl.handle.net/10054/611
http://dspace.library.iitb.ac.in/xmlui/handle/10054/611
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