Please use this identifier to cite or link to this item:
Title: Electron-electron interaction signature peak in the substrate current versus gate voltage characteristics of n-channel silicon MOSFETs
Authors: ANIL, KG
Keywords: Monte Carlo Methods
Electron-Phonon Interactions
Semiconductor Devices Breakdown
Hot Carriers
Impact Ionization
Issue Date: 2002
Publisher: IEEE
Citation: IEEE Transactions on Electron Devices 49(7), 1283-1288
Abstract: Impact ionization at low drain voltages in n-MOSFETs was investigated employing devices with three different channel-doping profiles. We report an anomalous peak in substrate current (ISUB ) versus gate voltage (VG) characteristics. It is shown that the anomalous peak can not be directly related to any high field region in the device. The measured data is interpreted based on the general nature of electron energy distribution published by Monte-Carlo simulation groups. Strong evidence is provided which suggest that the anomalous peak in ISUB versus VC, is due to electron-electron interactions.
ISSN: 0018-9383
Appears in Collections:Article

Files in This Item:
File Description SizeFormat 
21820.pdf167.5 kBAdobe PDFThumbnail

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.