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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/591

Title: Performance and reliability of single halo deep sub-micron p-MOSFETs for analog applications
Authors: JHA, NK
BAGHINI, MS
RAMGOPAL RAO, V
Keywords: mosfet
hot carriers
ion implantation
semiconductor device reliability
thermal stresses
Issue Date: 2002
Publisher: IEEE Xiang Luo Sarkar, S.
Citation: Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits, Singapore, 8-12 July 2002, 35-39
Abstract: The effect of channel hot carrier (CHC) stress under typical analog operating conditions is studied for the first time for single halo (SH) p-MOSFET devices. The SH devices show less degradation under identical operating conditions compared to conventional MOSFETs. The effect of SH implant parameters on device degradation is presented.
URI: 10.1109/IPFA.2002.1025608
http://hdl.handle.net/10054/591
http://dspace.library.iitb.ac.in/xmlui/handle/10054/591
ISBN: 0-7803-7416-9
Appears in Collections:Proceedings papers

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