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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/5901

Title: STUDY OF PROTON BINDING-SITES AT THE SILICON DIOXIDE-ELECTROLYTE INTERFACE WITH CONDUCTANCE SPECTROSCOPY
Authors: MITRA, M
LAL, R
Keywords: impedance
Issue Date: 1992
Publisher: ELECTROCHEMICAL SOC INC
Citation: JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 139(6), 1706-1714
Abstract: The kinetics of trapping and detrapping of protons at surface sites on thermally grown SiO2 have been studied in detail. A Shockley-Read-Hall-type model has been used to model trapping and detrapping of protons at these sites which behave as traps with two levels. A small signal equivalent circuit is obtained. The model has been validated with extensive imittance measurements on electrolyte-oxide-semiconductor structures. From the conductance frequency measurements, the response time of these traps is of the order of a few milliseconds which would also be the intrinsic response time of ion sensitive field effect transistor. The approach is quite general and could be used for studying trapping-detrapping of ions or charged molecules at other electrolyte-insulator interfaces.
URI: http://dx.doi.org/10.1149/1.2069481
http://dspace.library.iitb.ac.in/xmlui/handle/10054/5901
http://hdl.handle.net/10054/5901
ISSN: 0013-4651
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