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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/585

Title: Metallated porphyrin self assembled monolayers as Cu diffusion barriers for the nano-sale CMOS technologies
Authors: KHADERBAD, MA
NAYAK, K
YEDUKONDALU, M
RAVIKANTH, M
MUKHERJI, SOUMYA
RAMGOPAL RAO, V
Keywords: mos capacitors
ulsi
atomic force microscopy
copper
diffusion barriers
integrated circuit interconnections
Issue Date: 2008
Publisher: IEEE
Citation: Proceedings of the 8th IEEE Conference on Nanotechnology, Arlington, USA, 18-21 August 2008, 167-170
Abstract: In this paper we have studied the application of metallated porphyrin self assembled monolayers (SAMs) as Cu diffusion barriers for ultra-large scale integration (ULSI) CMOS applications. The results for Cu/SiO2/Si and Cu/SAM/SiO2/Si MOS CAP structures are compared through a detailed electrical characterization of threshold voltage shift using bias-temperature studies. Material characterization and surface morphology is studied using UV absorption spectra and AFM. Our results show that metallated porphyrin SAMs can be effectively used as Cu diffusion barriers for ULSI applications.
URI: 10.1109/NANO.2008.56
http://hdl.handle.net/10054/585
http://dspace.library.iitb.ac.in/xmlui/handle/10054/585
ISBN: 978-1-4244-2103-9
Appears in Collections:Proceedings papers

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