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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/583

Title: A simple and direct method for interface characterization of OFETs
Authors: SRINIVAS, P
TIWARI, SP
RAVAL, HN
RAMESH, RN
CAHYADI, T
MHAISALKAR, SG
RAMGOPAL RAO, V
Keywords: mosfet
dielectric materials
interface states
organic compounds
semiconductor device measurement
silicon compounds
Issue Date: 2007
Publisher: IEEE
Citation: Proceedings of the 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits, Bangalore, India, 11-13 July 2007, 306-309
Abstract: Multi-frequency transconductance technique is successfully applied in this work for the first time for interface characterization of OFETs. Standard charge pumping measurements are used on silicon MOSFETs for the validation of MFT technique. The method is implemented on pentacene as well as the P3HT based OFETs with SiO2 as the gate dielectric. Our results show interface state densities in the range of 1012/cm2/eV for both the samples. The P3HT films are also shown to have additional trap centres which respond to frequencies above 100 kHz. Our results therefore clearly indicate that the MFT technique is indeed a highly useful technique for interface characterization of OFETs.
URI: 10.1109/IPFA.2007.4378107
http://hdl.handle.net/10054/583
http://dspace.library.iitb.ac.in/xmlui/handle/10054/583
ISBN: 978-1-4244-1015-6
Appears in Collections:Proceedings papers

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