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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/582

Title: The effects of varying tilt angle of halo implant on the performance of sub 100nm LAC MOSFETs
Authors: SARKAR, P
MALLIK, A
SARKAR, CK
RAMGOPAL RAO, V
Keywords: mosfet
ion implantation
semiconductor device models
Issue Date: 2006
Publisher: IEEE
Citation: Proceedings of the First International Conference on Industrial and Information Systems, Peradeniya, Sri Lanka, 8-11 August 2006, 115-118
Abstract: In this paper we systematically investigate the effects of the varying tilt angle of the halo implants on the different device performance parameters of 100 nm lateral asymmetric channel (LAC) MOSFETs. The tilt angle is varied from 5deg to 60deg with twist angle 0deg. Substantial reduction of sub-threshold swing is found for large tilt angles as compared to low angles of halo implant. The device structure, known as lateral asymmetric channel with large angle tilt implant (LACLATI), exhibits better reverse short channel effect and I on/Ioff, and lower junction capacitance.
URI: 10.1109/ICIIS.2006.365647
http://hdl.handle.net/10054/582
http://dspace.library.iitb.ac.in/xmlui/handle/10054/582
ISBN: 1-4244-0322-7
Appears in Collections:Proceedings papers

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