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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/578

Title: Optimization of single halo p-MOSFET implant parameters for improved analog performance and reliability
Authors: JHA, NK
RAMGOPAL RAO, V
WOO, JCS
Keywords: semiconductor device models
ion implantation
doping profiles
mosfet
Issue Date: 2002
Publisher: IEEE
Citation: Proceeding of the 32nd European Solid-State Device Research Conference, Firenze, Italy, 24-26 September 2002, 603-606
Abstract: The effect of Channel Hot Carrier (CHC) stress under typical analog operating conditions is studied for p-MOSFETs. Our detailed characterization results show that Single Halo devices not only show improved performance, but also are immune to CHC degradation under various operating conditions.
URI: http://hdl.handle.net/10054/578
http://dspace.library.iitb.ac.in/xmlui/handle/10054/578
ISBN: 88-900847-8-2
Appears in Collections:Proceedings papers

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