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| Title: | Optimization of single halo p-MOSFET implant parameters for improved analog performance and reliability |
| Authors: | JHA, NK
RAMGOPAL RAO, V
WOO, JCS |
| Keywords: | semiconductor device models
ion implantation
doping profiles
mosfet |
| Issue Date: | 2002 |
| Publisher: | IEEE |
| Citation: | Proceeding of the 32nd European Solid-State Device Research Conference, Firenze, Italy, 24-26 September 2002, 603-606 |
| Abstract: | The effect of Channel Hot Carrier (CHC) stress
under typical analog operating conditions is studied for
p-MOSFETs. Our detailed characterization results show
that Single Halo devices not only show improved
performance, but also are immune to CHC degradation
under various operating conditions. |
| URI: | http://hdl.handle.net/10054/578
http://dspace.library.iitb.ac.in/xmlui/handle/10054/578 |
| ISBN: | 88-900847-8-2 |
| Appears in Collections: | Proceedings papers
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