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|Title:||Optimization of single halo p-MOSFET implant parameters for improved analog performance and reliability|
RAMGOPAL RAO, V
|Keywords:||Semiconductor Device Models|
|Citation:||Proceeding of the 32nd European Solid-State Device Research Conference, Firenze, Italy, 24-26 September 2002, 603-606|
|Abstract:||The effect of Channel Hot Carrier (CHC) stress under typical analog operating conditions is studied for p-MOSFETs. Our detailed characterization results show that Single Halo devices not only show improved performance, but also are immune to CHC degradation under various operating conditions.|
|Appears in Collections:||Proceedings papers|
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