Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/xmlui/handle/10054/576
Title: Sub-threshold swing degradation due to localized charge storage in SONOS memories
Authors: TOMAR, BHAWNA
RAMGOPAL RAO, V
Keywords: Capacitance
Circuit Simulation
Dielectric Thin Films
Integrated Circuit Modelling
Integrated Memory Circuits
Random-Access Storage
Issue Date: 2004
Publisher: IEEE
Citation: Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, Taiwan, 8 July 2004, 251-253
Abstract: This paper discusses the effect of localized charge storage on sub-threshold swing and threshold voltage in silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory cells. By analyzing the change in potential contours, it has been shown that the change in sub-threshold swing is correlated to fringing of electric field lines, and hence to the gate-to-substrate capacitance.
URI: 10.1109/IPFA.2004.1345613
http://hdl.handle.net/10054/576
http://dspace.library.iitb.ac.in/xmlui/handle/10054/576
ISBN: 0-7803-8454-7
Appears in Collections:Proceedings papers

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