|
DSpace at IIT Bombay >
IITB Publications >
Proceedings papers >
Please use this identifier to cite or link to this item:
http://dspace.library.iitb.ac.in/jspui/handle/10054/576
|
| Title: | Sub-threshold swing degradation due to localized charge storage in SONOS memories |
| Authors: | TOMAR, BHAWNA
RAMGOPAL RAO, V |
| Keywords: | capacitance
circuit simulation
dielectric thin films
integrated circuit modelling
integrated memory circuits
random-access storage |
| Issue Date: | 2004 |
| Publisher: | IEEE |
| Citation: | Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, Taiwan, 8 July 2004, 251-253 |
| Abstract: | This paper discusses the effect of localized charge storage on sub-threshold swing and threshold voltage in silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory cells. By analyzing the change in potential contours, it has been shown that the change in sub-threshold swing is correlated to fringing of electric field lines, and hence to the gate-to-substrate capacitance. |
| URI: | 10.1109/IPFA.2004.1345613
http://hdl.handle.net/10054/576
http://dspace.library.iitb.ac.in/xmlui/handle/10054/576 |
| ISBN: | 0-7803-8454-7 |
| Appears in Collections: | Proceedings papers
|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
|
