DSpace at IIT Bombay >
IITB Publications >
Proceedings papers >

Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/576

Title: Sub-threshold swing degradation due to localized charge storage in SONOS memories
Keywords: capacitance
circuit simulation
dielectric thin films
integrated circuit modelling
integrated memory circuits
random-access storage
Issue Date: 2004
Publisher: IEEE
Citation: Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, Taiwan, 8 July 2004, 251-253
Abstract: This paper discusses the effect of localized charge storage on sub-threshold swing and threshold voltage in silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory cells. By analyzing the change in potential contours, it has been shown that the change in sub-threshold swing is correlated to fringing of electric field lines, and hence to the gate-to-substrate capacitance.
URI: 10.1109/IPFA.2004.1345613
ISBN: 0-7803-8454-7
Appears in Collections:Proceedings papers

Files in This Item:

File Description SizeFormat
1345613.pdf168.59 kBAdobe PDFView/Open
View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.


Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback