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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/573

Title: Plasma process induced abnormal 1/f noise behavior in deep sub-micron MOSFETs
Authors: RAMGOPAL RAO, V
WIJERATNE, G
CHU, D
BROZEK, T
VISWANATHAN, CR
Keywords: mosfet
flicker noise
plasma materials processing
semiconductor device noise
semiconductor device testing
Issue Date: 1998
Publisher: IEEE
Citation: Proceedings of the 3rd International Symposium on Plasma Process-Induced Damage, Honolulu, USA, 4-5 June 1998, 124-127
Abstract: The effect of plasma damage on the MOSFET's flicker noise properties is examined in this work. We observe an abnormal noise peak in the 1/f noise spectrum at around 2 kHz which is a characteristic of the plasma damage. The dependence of the noise peak on the plasma induced degradation was studied in virgin n- and p-channel MOSFETs and this peak is shown to correlate well with the amount of damage in the p-MOSFETs.
URI: 10.1109/PPID.1998.725590
http://hdl.handle.net/10054/573
http://dspace.library.iitb.ac.in/xmlui/handle/10054/573
ISBN: 0-9651577-2-5
Appears in Collections:Proceedings papers

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