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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/572

Title: Simulation, fabrication and characterization of high performance planar-doped-barrier sub 100 nm channel MOSFETs
Authors: RAMGOPAL RAO, V
HANSCH, W
EISELE, I
Keywords: mosfet
characteristics measurement
doping profiles
hot carriers
molecular beam epitaxy
semiconductor doping
Issue Date: 1997
Publisher: IEEE
Citation: Proceedings of the International Electron Devices Meeting Technical Digest, Washington, USA, 7-10 December 1997, 811-814
Abstract: In this paper we present experimental and simulation results on planar-doped-barrier MOSFETs (PDBFETs) and show the advantages that arise from the channel delta doping. Early and higher magnitude of velocity overshoot, suppression of avalanche multiplication, reduced hot-carrier problems are some of the advantages offered by PDBFETs over the conventional homogeneously doped MOSFETs in the sub 100 nm regime. Our low-temperature characterizations show clear ballistic transport in the fabricated 85 nm channel MOSFETs.
URI: 10.1109/IEDM.1997.650505
http://hdl.handle.net/10054/572
http://dspace.library.iitb.ac.in/xmlui/handle/10054/572
ISBN: 0-7803-4100-7
Appears in Collections:Proceedings papers

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