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|Title:||Simulation, fabrication and characterization of high performance planar-doped-barrier sub 100 nm channel MOSFETs|
|Authors:||RAMGOPAL RAO, V|
Molecular Beam Epitaxy
|Citation:||Proceedings of the International Electron Devices Meeting Technical Digest, Washington, USA, 7-10 December 1997, 811-814|
|Abstract:||In this paper we present experimental and simulation results on planar-doped-barrier MOSFETs (PDBFETs) and show the advantages that arise from the channel delta doping. Early and higher magnitude of velocity overshoot, suppression of avalanche multiplication, reduced hot-carrier problems are some of the advantages offered by PDBFETs over the conventional homogeneously doped MOSFETs in the sub 100 nm regime. Our low-temperature characterizations show clear ballistic transport in the fabricated 85 nm channel MOSFETs.|
|Appears in Collections:||Proceedings papers|
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