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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/552

Title: Development of an ultrafast on-the-fly I DLIN technique to study NBTI in plasma and thermal oxynitride p-MOSFETs
Authors: MAHETA, VD
NARESH KUMAR, E
PURAWAT, S
OLSEN, C
AHMED, K
MAHAPATRA, S
Keywords: mosfet
stress effects
thermal stability
Issue Date: 2008
Publisher: IEEE
Citation: IEEE Transactions on Electron Devices 55 (10), 2614-2622
Abstract: An ultrafast on-the-fly technique is developed to study linear drain current (I DLIN) degradation in plasma and thermal oxynitride p-MOSFETs during negative-bias temperature instability (NBTI) stress. The technique enhances the measurement resolution (ldquotime-zerordquo delay) down to 1 mus and helps to identify several key differences in NBTI behavior between plasma and thermal films. The impact of the time-zero delay on time, temperature, and bias dependence of NBTI is studied, and its influence on extrapolated safe-operating overdrive condition is analyzed. It is shown that plasma-nitrided films, in spite of having higher N density, are less susceptible to NBTI than their thermal counterparts.
URI: http://dx.doi.org/10.1109/TED.2008.2003224
http://hdl.handle.net/10054/552
http://dspace.library.iitb.ac.in/xmlui/handle/10054/552
ISSN: 0018-9383
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