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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/550

Title: Defect generation in p-MOSFETs under negative-bias stress: an experimental perspective
Keywords: electric charge
mathematical models
parameter estimation
temperature measurement
Issue Date: 2008
Publisher: IEEE
Citation: IEEE Transactions on Device and Materials Reliability 8(1), 35-46
Abstract: In this paper, a focused review is made of our previously reported (2002-2007) work on negative-bias temperature-instability (NBTI) measurement and analysis. Using suitable cross-reference to other published work, the impacts of stress condition, characterization technique, and gate-oxide process on measured NBTI parameters are reviewed. The large scatter of measured time, bias, and temperature dependencies of NBTI, which are observed in published literature, is carefully analyzed. A common framework for NBTI physical mechanism is suggested and discussed. Issues lacking proper understanding at present are also highlighted.
URI: http://dx.doi.org/10.1109/TDMR.2007.912261
ISSN: 1530-4388
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