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|Title:||Defect generation in p-MOSFETs under negative-bias stress: an experimental perspective|
|Citation:||IEEE Transactions on Device and Materials Reliability 8(1), 35-46|
|Abstract:||In this paper, a focused review is made of our previously reported (2002-2007) work on negative-bias temperature-instability (NBTI) measurement and analysis. Using suitable cross-reference to other published work, the impacts of stress condition, characterization technique, and gate-oxide process on measured NBTI parameters are reviewed. The large scatter of measured time, bias, and temperature dependencies of NBTI, which are observed in published literature, is carefully analyzed. A common framework for NBTI physical mechanism is suggested and discussed. Issues lacking proper understanding at present are also highlighted.|
|Appears in Collections:||Article|
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