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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/547

Title: Drain bias dependence of gate oxide reliability in conventional and asymmetrical channel MOSFETs in the low voltage regime
Authors: ANIL, KG
Keywords: current distribution
dielectric thin films
low-power electronics
doping profiles
Issue Date: 2000
Publisher: IEEE
Citation: Proceeding of the 30th European Solid-State Device Research Conference, Cork, Ireland, 11-13 September 2000, 124-127
Abstract: Drain bias dependence of gate oxide reliability is investigated on conventional (CON) and Lateral Asymmetric Channel (LAC) MOSFETs for low drain voltages that correspond to the real operating voltages for deep-sub-micron devices. For short channel devices, the oxide reliability improves drastically as drain bias increases. Device simulations showed that the vertical field distribution in the oxide is asymmetric for non-zero drain biases and this results in an asymmetric gate current distribution with the peak at the source end. By introducing an intentionally graded doping profile along the channel (LAC), the asymmetry in the vertical filed distribution can be enhanced with consequent improvement in gate oxide reliability.
URI: http://hdl.handle.net/10054/547
ISBN: 2-86332-248-6
Appears in Collections:Proceedings papers

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