|
DSpace at IIT Bombay >
IITB Publications >
Proceedings papers >
Please use this identifier to cite or link to this item:
http://dspace.library.iitb.ac.in/jspui/handle/10054/546
|
| Title: | Role of inversion layer quantization on sub-bandgap impact ionization in deep-sub-micron n-channel MOSFETs |
| Authors: | ANIL, KG
MAHAPATRA, S
EISELE, I |
| Keywords: | mosfet
impact ionisation
inversion layers |
| Issue Date: | 2000 |
| Publisher: | IEEE |
| Citation: | Proceedings of the International Electron Devices Meeting Technical Digest, San Francisco, USA, 10-13 December 2000, 675-678 |
| Abstract: | Impact ionization in n-channel MOSFETs for drain voltages (VD ) below the bandgap voltages (qVD<EG) is investigated. Novel experimental results are presented which suggest that the present understanding of the phenomenon is incomplete. Based on the measured data, inversion layer quantization is proposed as an additional energy gain mechanism for the electrons by shifting the electron energy distribution to higher energies. |
| URI: | 10.1109/IEDM.2000.904409
http://hdl.handle.net/10054/546
http://dspace.library.iitb.ac.in/xmlui/handle/10054/546 |
| ISBN: | 0-7803-6438-4 |
| Appears in Collections: | Proceedings papers
|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
|
