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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/546

Title: Role of inversion layer quantization on sub-bandgap impact ionization in deep-sub-micron n-channel MOSFETs
Authors: ANIL, KG
MAHAPATRA, S
EISELE, I
Keywords: mosfet
impact ionisation
inversion layers
Issue Date: 2000
Publisher: IEEE
Citation: Proceedings of the International Electron Devices Meeting Technical Digest, San Francisco, USA, 10-13 December 2000, 675-678
Abstract: Impact ionization in n-channel MOSFETs for drain voltages (VD ) below the bandgap voltages (qVD<EG) is investigated. Novel experimental results are presented which suggest that the present understanding of the phenomenon is incomplete. Based on the measured data, inversion layer quantization is proposed as an additional energy gain mechanism for the electrons by shifting the electron energy distribution to higher energies.
URI: 10.1109/IEDM.2000.904409
http://hdl.handle.net/10054/546
http://dspace.library.iitb.ac.in/xmlui/handle/10054/546
ISBN: 0-7803-6438-4
Appears in Collections:Proceedings papers

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