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|Title:||Role of inversion layer quantization on sub-bandgap impact ionization in deep-sub-micron n-channel MOSFETs|
|Citation:||Proceedings of the International Electron Devices Meeting Technical Digest, San Francisco, USA, 10-13 December 2000, 675-678|
|Abstract:||Impact ionization in n-channel MOSFETs for drain voltages (VD ) below the bandgap voltages (qVD<EG) is investigated. Novel experimental results are presented which suggest that the present understanding of the phenomenon is incomplete. Based on the measured data, inversion layer quantization is proposed as an additional energy gain mechanism for the electrons by shifting the electron energy distribution to higher energies.|
|Appears in Collections:||Proceedings papers|
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