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Title: Experimental verification of the nature of the high energy tail in the electron energy distribution in n-channel MOSFETs
Authors: ANIL, KG
Keywords: Monte Carlo Methods
Semiconducting Silicon
Computer Simulation
Channel Capacity
Issue Date: 2001
Publisher: IEEE
Citation: IEEE Electron Device Letters 22 (10), 478-480
Abstract: Sensitive quantum-yield measurements (M) on n-channel MOSFETs for drain voltages (VD) near the bandgap voltage of silicon, showed an abnormal bell-shaped M versus gate voltage (VG) characteristic at 77 K. At higher VD, M decreases monotonously with increasing VG. Measured data is interpreted based on the general nature of electron energy distribution published by Monte-Carlo simulation groups and provide simultaneous experimental verification for the presence of a tail that depends strongly on lattice temperature and electron-electron interaction (EEI) broadening of the tail. Our data suggest EEI broadening of the tail even in the subthreshold regime.
ISSN: 0741-3106
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