DSpace at IIT Bombay >
IITB Publications >
Article >

Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/545

Title: Experimental verification of the nature of the high energy tail in the electron energy distribution in n-channel MOSFETs
Authors: ANIL, KG
Keywords: monte carlo methods
semiconducting silicon
computer simulation
channel capacity
Issue Date: 2001
Publisher: IEEE
Citation: IEEE Electron Device Letters 22 (10), 478-480
Abstract: Sensitive quantum-yield measurements (M) on n-channel MOSFETs for drain voltages (VD) near the bandgap voltage of silicon, showed an abnormal bell-shaped M versus gate voltage (VG) characteristic at 77 K. At higher VD, M decreases monotonously with increasing VG. Measured data is interpreted based on the general nature of electron energy distribution published by Monte-Carlo simulation groups and provide simultaneous experimental verification for the presence of a tail that depends strongly on lattice temperature and electron-electron interaction (EEI) broadening of the tail. Our data suggest EEI broadening of the tail even in the subthreshold regime.
URI: http://dx.doi.org/10.1109/55.954917
ISSN: 0741-3106
Appears in Collections:Article

Files in This Item:

File Description SizeFormat
954917.pdf63.99 kBAdobe PDFView/Open
View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.


Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback