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|Title:||Experimental verification of the nature of the high energy tail in the electron energy distribution in n-channel MOSFETs|
|Keywords:||Monte Carlo Methods|
|Citation:||IEEE Electron Device Letters 22 (10), 478-480|
|Abstract:||Sensitive quantum-yield measurements (M) on n-channel MOSFETs for drain voltages (VD) near the bandgap voltage of silicon, showed an abnormal bell-shaped M versus gate voltage (VG) characteristic at 77 K. At higher VD, M decreases monotonously with increasing VG. Measured data is interpreted based on the general nature of electron energy distribution published by Monte-Carlo simulation groups and provide simultaneous experimental verification for the presence of a tail that depends strongly on lattice temperature and electron-electron interaction (EEI) broadening of the tail. Our data suggest EEI broadening of the tail even in the subthreshold regime.|
|Appears in Collections:||Article|
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