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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/544

Title: Mobility degradation due to interface traps in plasma oxynitride PMOS devices
Authors: ISLAM, AE
MAHETA, VD
DAS, H
MAHAPATRA, S
ALAM, MA
Keywords: mosfet
plasma devices
semiconductor device reliability
Issue Date: 2008
Publisher: IEEE
Citation: Proceedings of the IEEE International Reliability Physics Symposium, Phoenix, USA, 27 April-1 May 2008, 87-96
Abstract: Mobility degradation due to generation of interface traps (Deltamueff(NIT)) is a well-known phenomenon that has been theoretically interpreted by several mobility models. Based on these analysis, there is a general perception that Deltamueff(NIT) is relatively insignificant (compared to Deltamueff due to ionized impurity) and as such can be safely ignored for performance and reliability analysis. Here, we investigate the importance of considering Deltamueff(NIT) for reliability analysis by analyzing a wide variety of plasma oxynitride PMOS devices using both parametric and physical mobility models. We find that contrary to popular belief this correction is fundamentally important for robust and uncorrupted estimates of the key reliability parameters like threshold-voltage shift, lifetime projection, voltage acceleration factor, etc. Therefore, in this paper, we develop a generalized algorithm for estimating Deltamueff(NIT) for plasma oxynitride PMOS devices and systematically explore its implications for NBTI-specific reliability analysis.
URI: 10.1109/RELPHY.2008.4558868
http://hdl.handle.net/10054/544
http://dspace.library.iitb.ac.in/xmlui/handle/10054/544
ISBN: 978-1-4244-2049-0
Appears in Collections:Proceedings papers

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