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| Title: | On the dispersive versus arrhenius temperature activation of nbti time evolution in plasma nitrided gate oxides: measurements, theory, and implications |
| Authors: | VARGHESE, D
SAHA, D
MAHAPATRA, S
AHMED, K
NOURI, F
ALAM, M |
| Keywords: | mosfet
hole traps
interface states
semiconductor device reliability
thermal stability |
| Issue Date: | 2005 |
| Publisher: | IEEE |
| Citation: | Proceedings of the IEEE International Electron Devices Meeting Technical Digest, Washington, USA, 5-5 December 2005, 684-687 |
| Abstract: | Negative bias temperature instability (NBTI) is studied in p-MOSFETs having decoupled plasma nitrided (DPN) gate oxides (EOT range of 12 Aring through 22Aring). Threshold voltage shift (DeltaVT) is shown to be primarily due to interface trap generation (DeltaNIT) and significant hole trapping (DeltaNOT) has not been observed. DeltaVT follows power-law time (t) dependence and Arrhenius temperature (T) activation. |
| URI: | 10.1109/IEDM.2005.1609444
http://hdl.handle.net/10054/543
http://dspace.library.iitb.ac.in/xmlui/handle/10054/543 |
| ISBN: | 0-7803-9268-x |
| Appears in Collections: | Proceedings papers
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