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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/543

Title: On the dispersive versus arrhenius temperature activation of nbti time evolution in plasma nitrided gate oxides: measurements, theory, and implications
Authors: VARGHESE, D
SAHA, D
MAHAPATRA, S
AHMED, K
NOURI, F
ALAM, M
Keywords: mosfet
hole traps
interface states
semiconductor device reliability
thermal stability
Issue Date: 2005
Publisher: IEEE
Citation: Proceedings of the IEEE International Electron Devices Meeting Technical Digest, Washington, USA, 5-5 December 2005, 684-687
Abstract: Negative bias temperature instability (NBTI) is studied in p-MOSFETs having decoupled plasma nitrided (DPN) gate oxides (EOT range of 12 Aring through 22Aring). Threshold voltage shift (DeltaVT) is shown to be primarily due to interface trap generation (DeltaNIT) and significant hole trapping (DeltaNOT) has not been observed. DeltaVT follows power-law time (t) dependence and Arrhenius temperature (T) activation.
URI: 10.1109/IEDM.2005.1609444
http://hdl.handle.net/10054/543
http://dspace.library.iitb.ac.in/xmlui/handle/10054/543
ISBN: 0-7803-9268-x
Appears in Collections:Proceedings papers

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