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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/5394

Title: VIBRATIONAL-MODES IN ELECTRODEPOSITED AMORPHOUS-SILICON - FT-IR ANALYSIS
Authors: SARMA, PRL
MOHAN, TRR
VENKATACHALAM, S
SUNDARSINGH, VP
SINGH, J
Keywords: infrared-absorption spectra
glow-discharge
structural interpretation
hydrogen alloys
h alloys
films
oxygen
Issue Date: 1992
Publisher: CHAPMAN HALL LTD
Citation: JOURNAL OF MATERIALS SCIENCE, 27(17), 4762-4771
Abstract: Infrared spectra of 13 samples of amorphous silicon bonded with hydrogen, fluorine and carbon, prepared by electrodeposition using a mixture of ethylene glycol and fluosilicic acid were analysed in the wave number region 4000-400 cm-1 with a Fourier transform infrared spectrometer. Strong absorption peaks were observed at 1000 cm-1 due to the SiF(x) stretching mode. Small peaks were seen around 2300 and 640 cm-1 due to SiH stretching and wagging modes of absorption. The number of bonded hydrogen atoms in the film deposited at 0.05 M, 50 mA cm-2 was calculated to be 6.2579 x 10(21) and 1.2302 x 10(20) atm cm-3 using integrated absorption of the CH and SiH stretching modes, respectively. The absorption coefficient around the SiF(x) stretch region was found to vary from 1300-2500 cm-1 as the molarity of the electrolyte was increased. Binding energy shifts in X-ray photoelectron spectrum were used as a cross check to confirm the silicon bonding with carbon, hydrogen, oxygen and fluorine atoms. The absence of columnar growth in SEM photographs indicates no polysilane formation in the films.
URI: http://dx.doi.org/10.1007/BF01166018
http://dspace.library.iitb.ac.in/xmlui/handle/10054/5394
http://hdl.handle.net/10054/5394
ISSN: 0022-2461
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