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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/5387

Title: Surface properties of electrodeposited a-Si:C:H:F thin films by x-ray photoelectron spectroscopy
Authors: RAM, P
SINGH, J
RAMAMOHAN, TR
VENKATACHALAM, S
SUNDARSINGH, VP
Keywords: amorphous hydrogenated silicon
photoemission spectroscopy
glow-discharge
solar-cell
microstructure
efficiency
spectra
esca
Issue Date: 1997
Publisher: CHAPMAN HALL LTD
Citation: JOURNAL OF MATERIALS SCIENCE, 32(23), 6305-6310
Abstract: Surface properties of amorphous silicon thin films containing hydrogen, flourine and carbon obtained from hydrofluosilicic acid and ethylene glycol using the electrodeposition method are reported as a function of current density and deposition time. The Si2p core level X-ray photoelectron spectra exhibited binding-energy shifts corresponding to SiFx (x = 1-4), SiC, Si-H and Si-O-2 type bond formations. The shifts in 1s spectra of fluorine, carbon x and oxygen confirmed the presence of fluorine, carbon and oxygen in bonded form. Theoretical binding-energy shifts calculated from Pauling's electronegativity values were in close agreement with the measured values. The relative concentration values of C/Si estimated in these films were found to be larger than those of F/Si and O/Si. The results were corroborated with infrared spectroscopy and scanning electron microscopy data.
URI: http://dx.doi.org/10.1023/A:1018653631062
http://dspace.library.iitb.ac.in/xmlui/handle/10054/5387
http://hdl.handle.net/10054/5387
ISSN: 0022-2461
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