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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/536

Title: Gate insulator process dependent NBTI in SiON p-MOSFETs
Authors: MAHAPATRA, S
MAHETA, VD
Keywords: integrated circuits
thermodynamic stability
negative temperature coefficient
mosfet devices
Issue Date: 2008
Publisher: IEEE
Citation: Proceedings of the 9th International Conference on Solid-State and Integrated-Circuit Technology, Beijing, China, 20-23 October 2008, 616-619
Abstract: The material dependence of NBTI in SiON p-MOSFETs is studied using the UF-OTF IDLIN method. It is shown that the N density at the Si/SiON interface plays a very crucial role in determining the magnitude as well as the time, temperature and field dependence of NBTI. The relative contribution of interface trap generation and hole trapping to overall degradation is qualitatively discussed.
URI: 10.1109/ICSICT.2008.4734620
http://hdl.handle.net/10054/536
http://dspace.library.iitb.ac.in/xmlui/handle/10054/536
ISBN: 978-1-4244-2185-5
Appears in Collections:Proceedings papers

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