Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/xmlui/handle/10054/533
Title: Study of degradation in channel initiated secondary electron injection regime
Authors: MOHAPATRA, NR
MAHAPATRA, S
RAMGOPAL RAO, V
Keywords: Flash Memory
Stresses
Secondary Electron Emmission
Issue Date: 2001
Publisher: IEEE
Citation: Proceeding of the 31st European Solid-State Device Research Conference, Nuremberg, Germany, 11-13 September 2001, 291-294
Abstract: This paper analyzes the Channel Initiated Secondary Electron injection mechanism and the resulting hot-carrier degradation in deep sub-micron n-channel MOSFETs. The correlation between gate (IG) and substrate current (IB) has been studied for different values of substrate bias. Stress and charge pumping measurements have been carried out to study the degradation under identical substrate bias and gate current conditions. Results show that under identical gate current (programming time for flash memory cells), the degradation is less for higher negative substrate bias.
URI: http://hdl.handle.net/10054/533
http://dspace.library.iitb.ac.in/xmlui/handle/10054/533
ISBN: 2-914601-01-8
Appears in Collections:Proceedings papers

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