Please use this identifier to cite or link to this item:
|Title:||Study of degradation in channel initiated secondary electron injection regime|
RAMGOPAL RAO, V
Secondary Electron Emmission
|Citation:||Proceeding of the 31st European Solid-State Device Research Conference, Nuremberg, Germany, 11-13 September 2001, 291-294|
|Abstract:||This paper analyzes the Channel Initiated Secondary Electron injection mechanism and the resulting hot-carrier degradation in deep sub-micron n-channel MOSFETs. The correlation between gate (IG) and substrate current (IB) has been studied for different values of substrate bias. Stress and charge pumping measurements have been carried out to study the degradation under identical substrate bias and gate current conditions. Results show that under identical gate current (programming time for flash memory cells), the degradation is less for higher negative substrate bias.|
|Appears in Collections:||Proceedings papers|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.