DSpace
 

DSpace at IIT Bombay >
IITB Publications >
Proceedings papers >

Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/531

Title: Effect of programming biases on the reliability of CHE and CHISEL flash EEPROMs
Authors: MOHAPATRA, NR
MAHAPATRA, S
RAMGOPAL RAO, V
SHUKURI, S
BUDE, JD
Keywords: computer programming
monte carlo methods
circuit simulation
hot carriers
Issue Date: 2003
Publisher: IEEE
Citation: Proceedings of the 41st Annual International Reliability Physics Symposium, Dallas, USA, 30 March-4 April 2003, 518-522
Abstract: The effect of programming biases on the cycling endurance of NOR flash EEPROMs is studied under CHE and CHISEL operation. CHE degradation increases at higher control gate bias (VCG) and is insensitive to changes in drain bias (VD) CHISEL degradation is insensitive to changes in both VCG, and VD. Furthermore, CHISEL always shows lower degradation when compared to CHE under identical bias and similar programming time. The possible physical mechanisms responsible for the above behavior are clarified by using full band Monte-Carlo simulations.
URI: 10.1109/RELPHY.2003.1197802
http://hdl.handle.net/10054/531
http://dspace.library.iitb.ac.in/xmlui/handle/10054/531
ISBN: 0-7803-7649-8
Appears in Collections:Proceedings papers

Files in This Item:

File Description SizeFormat
1197802.pdf320.85 kBAdobe PDFView/Open
View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback