DSpace
 

DSpace at IIT Bombay >
IITB Publications >
Article >

Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/50

Title: A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs
Authors: MAHAPATRA, S
PARIKH, CD
VASI, J
RAMGOPAL RAO, V
VISWANATHAN, CR
Keywords: curve fitting
electron traps
electronic density of states
mosfet
semiconductor device testing
interface states
Issue Date: 1999
Publisher: Elsevier
Citation: Solid-State Electronics 43 (5), 915-22
Abstract: A new charge pumping (CP) technique is proposed to obtain the spatial profile of interface-state density (Nit) and oxide charges (Not) near the drain junction of hot-carrier stressed MOSFETs. Complete separation of Nit from Not is achieved by using a direct noniterative method. The pre-stress CP edge is corrected for the charges associated with both the generated Nit and Not. A closed form model is developed to predict the stress-induced incremental CP current. The damage distributions are obtained after fitting the model with experimental data.
Description: Copyright to Elsevier Publisher
URI: http://dx.doi.org/10.1016/S0038-1101(98)00326-8
http://hdl.handle.net/10054/50
http://dspace.library.iitb.ac.in/xmlui/handle/10054/50
ISSN: 0038-1101
Appears in Collections:Article

Files in This Item:

File Description SizeFormat
vasi2.pdf289.49 kBAdobe PDFView/Open
View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback