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| Title: | A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs |
| Authors: | MAHAPATRA, S
PARIKH, CD
VASI, J
RAMGOPAL RAO, V
VISWANATHAN, CR |
| Keywords: | curve fitting
electron traps
electronic density of states
mosfet
semiconductor device testing
interface states |
| Issue Date: | 1999 |
| Publisher: | Elsevier |
| Citation: | Solid-State Electronics 43 (5), 915-22 |
| Abstract: | A new charge pumping (CP) technique is proposed to obtain the spatial profile of interface-state density (Nit) and oxide charges (Not) near the drain junction of hot-carrier stressed MOSFETs. Complete separation of Nit from Not is achieved by using a direct noniterative method. The pre-stress CP edge is corrected for the charges associated with both the generated Nit and Not. A closed form model is developed to predict the stress-induced incremental CP current. The damage distributions are obtained after fitting the model with experimental data. |
| Description: | Copyright to Elsevier Publisher |
| URI: | http://dx.doi.org/10.1016/S0038-1101(98)00326-8
http://hdl.handle.net/10054/50
http://dspace.library.iitb.ac.in/xmlui/handle/10054/50 |
| ISSN: | 0038-1101 |
| Appears in Collections: | Article
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