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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/4611

Title: Tunability of Photoluminescence of InAs/GaAs Quantum Dots by Growth Pause Introduced Ripening
Authors: HALDER, N
CHAKRABARTI, S
STANLEY, CR
Keywords: molecular-beam epitaxy
room-temperature
inas
islands
lasers
gaas
Issue Date: 2008
Publisher: AMER SCIENTIFIC PUBLISHERS
Citation: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 8(12), 6232-6237
Abstract: The effect of dot ripening pause on self organized InAs/GaAs QD's grown by MBE at two different growth rates and the resulting tunability of emission properties were studied with the help of PL and AFM experiments. We found the evolution of larger coherent islands with dot-pause due to high surface mobility of the In adatoms at the growth temperature resulting in a redshift in the PL spectra. A small blue shift in the emission is observed in case of the islands grown at higher growth rate and being allowed to ripen for sufficient time due to In desorption at high growth temperature.
URI: http://dx.doi.org/10.1166/jnn.2008.364
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4611
http://hdl.handle.net/10054/4611
ISSN: 1533-4880
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