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|Title: ||Photoluminescence Investigation of the Effects of Barrier Thickness and Monolayer Coverage on Properties of Bilayer InAs/GaAs Quantum Dots|
|Authors: ||CHAKRABARTI, S|
|Keywords: ||1.3 mu-m|
|Issue Date: ||2008|
|Publisher: ||AMER SCIENTIFIC PUBLISHERS|
|Citation: ||JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 3(3), 277-280|
|Abstract: ||The optical properties of InAs/GaAs bi-layer quantum dots were investigated by photoluminescence (PL) measurements. We have studied the effects of the GaAs spacer thickness in between the dot layers and the monolayer coverage of the top quantum dot (QD) layer on the PL wavelengths and emission line-widths of the bi-layer QD samples grown at a low growth rate (0.028 ML/s). The samples showed multiple excited states for the top layer QDs suggesting the formation of large sized defect free islands in the top layer of the bilayer samples due to reduced growth rate. Also the samples were tuned to give peak emission close to similar to 1.3 mu m at room temperature and yielded an extremely narrow line-width of 16.8 meV at 25 K for lambda = 1.23 mu m.|
|Appears in Collections:||Article|
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