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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/4596

Title: Electrochemical Growth of Ordered Nickel Nano-Rods Within a Composite Structure of Anodic-Alumina-Membrane/Metal/Silicon Substrate
Authors: BANERJEE, A
HALDER, N
Keywords: field-emission characteristics
chemical-vapor-deposition
hexagonal pore arrays
high-aspect-ratio
magnetic-properties
nanowires
electrodeposition
fabrication
films
templates
Issue Date: 2010
Publisher: AMER SCIENTIFIC PUBLISHERS
Citation: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 10(7), 4252-4258
Abstract: Electrochemical growth of highly oriented Ni nano-rods within the arrays of anodic alumina pores has various important applications including magnetic, sensor and field-emission displays. Applicability of ordered nano-rods in practical devices requires proper designing of the structure with high stability and robustness. Anodic alumina membrane grown on Si substrate offers less fragile, stable, compact and robust structure as a host for nano-rod growth through the nanopores. We have fabricated highly ordered Ni-nanorods via cost-effective electrochemical deposition process within a porous alumina matrix. The device structure composed of Ni nano-rod/porousalumina/tantalum/silicon-substrate. Metallic Ta is used as the electrode for Ni electrodeposition. Electron Microscopic images depict the highly uniform growth of Ni nano-rods through the alumina pores with nano-rod length around 100 nm. Energy dispersive X-ray analysis verifies the presence of Ni within the sample. One of the important applications of Ni nano-rods is the field emission devices. The host alumina template in the alumina/nano-rod/Si structure is believed to provide necessary stability of the proposed device for practical applications. Ni nano-rods encapsulated within the alumina pores with a top metallic layer can be used as a field-emission device for potential low power panel applications.
URI: http://dx.doi.org/10.1166/jnn.2010.2675
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4596
http://hdl.handle.net/10054/4596
ISSN: 1533-4880
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