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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/4481

Title: THE NATURE OF THE HOLE TRAPS IN REOXIDIZED NITRIDED-OXIDE GATE DIELECTRICS
Authors: MALLIK, A
VASI, J
CHANDORKAR, AN
Keywords: rapid-thermal nitridation
inversion layer mobility
silicon dioxide
mos devices
reoxidation
mosfets
sio2
injection
endurance
Issue Date: 1993
Publisher: AMER INST PHYSICS
Citation: JOURNAL OF APPLIED PHYSICS, 74(4), 2665-2668
Abstract: To find out the nature of hole traps in reoxidized nitrided oxide (RNO), a series of field and thermal detrapping experiments were performed following irradiation. It has been found that not only are the hole traps in RNO located near the gate-SiO2 interface instead of near the Si-SiO2 interface as in conventional dry oxides, but that the energy distribution of these traps is also quite different from that in conventional oxides. This indicates that the origin of the traps in RNO is different from that normally found in conventional oxides.
URI: http://dx.doi.org/10.1063/1.354658
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4481
http://hdl.handle.net/10054/4481
ISSN: 0021-8979
Appears in Collections:Article

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