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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/4464

Title: STACKING-FAULTS UNDER REOXIDIZED NITRIDED OXIDES
Authors: KOLACHINA, SK
LAL, R
Keywords: thermal nitridation
impurity diffusion
silicon
oxidation
defects
surface
sio2
Issue Date: 1992
Publisher: AMER INST PHYSICS
Citation: APPLIED PHYSICS LETTERS, 61(4), 438-440
Abstract: Processing induced stacking faults below reoxidized nitrided oxides have been observed by electron beam induced current (EBIC) imaging and by secondary electron imaging after preferential etching. Comparative studies of stacking fault lengths with those of dry and nitrided oxides show that the growth rates of stacking faults are anomalously high during reoxidation. A large proportion of these stacking faults show electrical activity in EBIC images. This is reflected in the degradation of effective generation lifetimes as seen in transient capacitance measurements.
URI: http://dx.doi.org/10.1063/1.107907
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4464
http://hdl.handle.net/10054/4464
ISSN: 0003-6951
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